Selection of SPICE Parameters and Equations for Effective Simulatio of Circuits with 4H-SiC Power MOSFETs

Philip Tanner; Sima Dimitrijev; Hamid Amini Moghadam; Amirhossein Aminbeidokhti; Jisheng Han
March 2014
Materials Science Forum;2014, Vol. 778-780, p997
Academic Journal
Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.


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