TITLE

Characterization of SiO2/4H-SiC interface by device simulation and temperature dependence of on-resistance of SiC MOSFET

AUTHOR(S)
K. Ohtsuka; S. Hino; A. Nagae; R. Tanaka; Y. Kagawa; N. Miura; S. Nakata
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p993
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
MOS interface traps are characterized by device simulation on the basis of temperature dependence of lateral MOS-TEG devices on the same Al-implanted p-type region as vertical device. The simulation shows fairly large Dit in SiO2/4H-SiC interface, corresponding to the suggested trap density inside the conduction band. Temperature dependence of on-resistance is explained by application of evaluated interface properties to calculation of current voltage properties of vertical DMOSFET.
ACCESSION #
94903230

 

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