TITLE

Improvement of Channel Mobility in 4H-SiC C-face MOSFETs by H2 Rich Wet Re-Oxidation

AUTHOR(S)
Mitsuo Okamoto; Youichi Makifuchi; Tsuyoshi Araoka; Masaki Miyazato; Yoshiyuki Sugahara; Takashi Tsutsumi; Yasuhiko Onishi; Hiroshi Kimura; Shinsuke Harada; Kenji Fukuda; Akihiro Otsuki; Hajime Okumura
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p975
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
4H-SiC(000-1) C-face was oxidized in H2O and H2 mixture gas (H2 rich wet ambient) for the first time. H2 rich wet ambient was formed by the catalytic water vapor generator (WVG) system, where the catalytic action instantaneously enhances the reactivity between H2 and O2 to produce H2O. The dependence of SiC oxidation rate on the H2O partial pressure was investigated. We fabricated 4H-SiC C-face MOS capacitor and MOSFET by the H2 rich wet re-oxidation following the dry O2 oxidation. The density of interface traps was reduced and the channel mobility was improved in comparison with the conventional O2 rich wet oxidation.
ACCESSION #
94903226

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics