Comparison of 600V Si, SiC and GaN power devices

Sauvik Chowdhury; Zachary Stum; Zhongda Li; Katsunori Ueno; T. Paul Chow
March 2014
Materials Science Forum;2014, Vol. 778-780, p971
Academic Journal
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.


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