TITLE

Comparison of 600V Si, SiC and GaN power devices

AUTHOR(S)
Sauvik Chowdhury; Zachary Stum; Zhongda Li; Katsunori Ueno; T. Paul Chow
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p971
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
ACCESSION #
94903225

 

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