TITLE

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

AUTHOR(S)
Gajewski, Donald A.; Ryu, Sei-Hyung; Das, Mrinal; Hull, Brett; Young, Jonathan; Palmour, John
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p967
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The article discusses reliability results on depletion metal-oxide semiconductor field-effect transistor (DMOSFET) devices from Cree, Inc. A schematic cross section of the Cree 2nd Generation Z-FET silicon carbide (SiC) DMOSFET device is provided. The wear-out performance and long field lifetime of the power switches are also described.
ACCESSION #
94903224

 

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