Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET

Shiro Hino; Masanao Ito; Naruhisa Miura; Masayuki Imaizumi; Satoshi Yamakawa
March 2014
Materials Science Forum;2014, Vol. 778-780, p963
Academic Journal
The influences of internally unbalanced switching behavior on the switching characteristics and RBSOA were investigated in order to realize a large-size SiC-MOSFET. Specially designed small-size MOSFETs in which the unbalanced behavior is enhanced by adjusting the geometrical gate structures were fabricated, and their switching characteristics were evaluated. It was found that the same switching characteristics can be obtained by regarding them as MOSFETs with high inner gate resistances. A 1-cm² SiC-MOSFET was fabricated, and high dV/dt switching and high turn-off endurance were demonstrated.


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