Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation

Naoki Kaji; Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
March 2014
Materials Science Forum;2014, Vol. 778-780, p832
Academic Journal
Ultrahigh-voltage SiC PiN diodes with an original junction termination extension (JTE) structure and improved forward characteristics are presented. A space-modulated JTE (SM-JTE) structure was designed by device simulation, and a high breakdown voltage of 26.9 kV was achieved by using a 270 μm-thick epilayer and 1050 μm-long JTE. In addition, lifetime enhancement process via thermal oxidation was performed to improve the forward characteristics. The on-resistance of the SiC PiN diodes was remarkably reduced by lifetime enhancement process. The temperature dependence of the on-resistance was also discussed.


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