TITLE

Analysis of C-face 4H-SiC MOS capacitors with ZrO2 gate dielectric

AUTHOR(S)
Le-Shan Chan; Yu-Hao Chang; Kung-Yen Lee
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p635
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZrO2 films were deposited on C-face 4H-SiC substrates by using an RF sputter at a temperature of 200°C. Then, ZrO2 films were treated with RTA (rapid thermal annealing) process in Argon (Ar) and N2 ambient at 600°C, 700°C and 800°C for 4 minutes, respectively. The samples with RTA process show the lower leakage currents. As the measurement temperature increases from room temperature (RT) to 150°C, the dielectric breakdown field reduces from 0.53 MV/cm to 0.41 MV/cm. The C-V curves shift to the left side as the measurement temperature increases from RT to 150°C. It also shows the existence of interface states at the deep level observed from the interface state ledge on C-V curves of capacitors at elevated measurement temperature.
ACCESSION #
94903144

 

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