4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Naik, Harsh; Chow, T. Paul
March 2014
Materials Science Forum;2014, Vol. 778-780, p607
Academic Journal
This paper compares the performance of 4H-SiC MOS capacitors and MOSFETs made using the conventional NO annealing process and a high-temperature (1400° C) dry oxidation process. Through extensive C-V, G-ω, I-V and Hall measurements, the limitations of both the processes are discussed.


Related Articles

  • Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors. Thomas, S. M.; Jennings, M. R.; Sharma, Y. K.; Fisher, C. A.; Mawby, P. A. // Materials Science Forum;2014, Vol. 778-780, p599 

    Despite the material advantages of Silicon-Carbide (SiC), the on resistance of 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near the oxide/SiC interface (Dit). In this work, the effect of the oxidation ambient (oxygen flow rates of 0.05 l/min-2.5...

  • Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by Hall effect. Ortiz, G.; Mortet, V.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A. J.; Pichler, P.; Cristiano, F.; Bedel-Pereira, E. // Materials Science Forum;2014, Vol. 806, p127 

    In this work, electrical properties of lateral n-channel MOSFETs implanted with different nitrogen doses ([N]) in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing [N] is observed. Interface trap density (Dit) was determined from the...

  • Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening. Hui Deng; Katsuyoshi Endo; Kazuya Yamamura // Applied Physics Letters;3/10/2014, Vol. 104 Issue 10, p1 

    The thermal oxidation and water vapor plasma oxidation of 4H-SiC (0001) were investigated. The initial oxidation rate of helium-based atmospheric-pressure plasma oxidation was six times higher than that of thermal oxidation. The oxide-SiC interface generated by plasma oxidation became flatter...

  • 40 mΩ / 1700 V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications. A. Ohoka; N. Horikawa; T. Kiyosawa; H. Sorada; M. Uchida; Y. Kanzawa; K. Sawada; T. Ueda; E. Fujii // Materials Science Forum;2014, Vol. 778-780, p911 

    Device technologies of SiC MOSFETs have nearly matured to the level of mass production and one of the remaining tasks is to serve better solutions in view of both costs and performances for practical systems. Elimination of external reverse diodes in inverter circuits is one of the solutions, by...

  • C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance. T. Umeda; M. Okamoto; R. Arai; Y. Satoh; R. Kosugi; S. Harada; H. Okumura; T. Makino; T. Ohshima // Materials Science Forum;2014, Vol. 778-780, p414 

    This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(0001) "C face" MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.

  • Blocking Characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination. Keiji Wada; Kosuke Uchid; Ren Kimura; Mitsuhiko Sakai; Satoshi Hatsukawa; Kenji Hiratsuka; Noriyuki Hirakata; Yasuki Mikamura // Materials Science Forum;2014, Vol. 778-780, p915 

    Blocking characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with various doping conditions for the edge termination region have been investigated. By optimizing the implanted dose into the edge termination structure consisting of junction termination extension (JTE) and field-limiting...

  • Comparison of 600V Si, SiC and GaN power devices. Sauvik Chowdhury; Zachary Stum; Zhongda Li; Katsunori Ueno; T. Paul Chow // Materials Science Forum;2014, Vol. 778-780, p971 

    In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

  • CALL FOR PROJECTS Focused on Improving WBG Semiconductors.  // Electronic Design;Dec2015, Vol. 63 Issue 12, p11 

    The article focuses on the establishment of the PowerAmerica Institute by the U.S. Department of Energy for the development of manufacturing methods for widebandgap (WBG) semiconductors. Topics discussed include the importance of the advantages of WBG semiconductors, the semiconductors which are...

  • DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE. Hasanuzzaman, M. D.; Islam, Syed K.; Tolbert, Leon M.; Ozpineci, Burak // International Journal of High Speed Electronics & Systems;Jun2006, Vol. 16 Issue 2, p733 

    In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide (SIC) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics