TITLE

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

AUTHOR(S)
Naik, Harsh; Chow, T. Paul
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p607
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper compares the performance of 4H-SiC MOS capacitors and MOSFETs made using the conventional NO annealing process and a high-temperature (1400° C) dry oxidation process. Through extensive C-V, G-ω, I-V and Hall measurements, the limitations of both the processes are discussed.
ACCESSION #
94903137

 

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