Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation

Takuji Hoso; Yusuke Uenishi; Yuki Nakano; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe
March 2014
Materials Science Forum;2014, Vol. 778-780, p562
Academic Journal
The impact of a sacrificial oxidation treatment on subsequent gate oxide formation on 4H-SiC(0001) substrates was investigated. Although x-ray photoelectron spectroscopy (XPS) analysis revealed that the SiC surface after removing a 40-nm-thick sacrificial oxide by diluted HF solution was almost identical to that of an as-grown epilayer, the subsequent dry O2 oxidation resulted in a thinner SiO2 layer for the sample with the sacrificial oxidation in the ultrathin film regime (~3 nm). The metal-oxide-semiconductor (MOS) capacitor with sacrificial oxidation also exhibited a larger frequency dispersion in capacitance-voltage (C-V) characteristics, indicating that interface property had been degraded. However, when the oxide thickness reached about 10 nm, there was no difference in frequency dispersion with and without sacrificial oxidation. This means that the SiO2 growth in the initial stage of oxidation was significantly affected by the sacrificial oxidation treatment.


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