TEM observation of defect structure of low-energy ion implanted SiC

Toshimasa Kameda; Atsuo Tomita; Takaaki Matsui; Toshiyuki Isshiki
March 2014
Materials Science Forum;2014, Vol. 778-780, p350
Academic Journal
The aim of this review is to present the observation of low-energy ion implanted SiC and annealing them by using TEM. By detail analyses of the TEM images and results of SRIM, ion implanted SiC was classification four structure depending on the ion concentration in a few ten nm shallow region. This results suggest that crystal structure in a few nm shallow region can be controlled by concentration of the ion implant. And SiC was re-crystallized single poly-type after annealed at 1500°C. But, defects in end of amorphous region affect to recover of the damaged structure.


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