TITLE

Influence of insitu Photoexcitation on Structure of Damaged Layer in GaAs (001) Substrates Implanted with Ar[sup 3+] Ions

AUTHOR(S)
Shcherbatchev, K. D.; Bublik, V. T.; Trush, Yu. F.; Markevich, A. S.; Mordkovich, V. N.
PUB. DATE
March 2003
SOURCE
Crystallography Reports;Mar2003, Vol. 48 Issue 2, p187
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of photoexcitation on the formation of the defect structure in GaAs crystals implanted with 200 keV Ar[sup +] ions at doses of 1×10[sup 13],3×10[sup 13], and 5×10[sup 13]cm[sup –2] has been studied by high-resolution X-ray diffractometry. It was found that photoexcitation gives rise to annihilation of radiation-induced Frenkel pairs, and, thus, decreases the residual concentration of radiation-induced point defects. It is established that amorphization of the damaged layer proceeds via the formation and growth of clusters of radiation-induced point defects. The vacancy- and interstitial-type clusters are spatially separated—the former are located closer to the crystal surface than the latter. Photoexcitation hinders cluster growth and stimulates diffusion of interstitial defects into the substrate depth. © 2003 MAIK “Nauka / Interperiodica”.
ACCESSION #
9468309

 

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