Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

Kneissl, Michael; Treat, David W.; Teepe, Mark; Miyashita, Naoko; Johnson, Noble M.
April 2003
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2386
Academic Journal
We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as low as 5 kA/cm² for laser diodes with emission wavelengths between 368 nm and 378 nm and have demonstrated lasing at 363.2 nm at room temperature, the shortest wavelength yet reported for a semiconductor laser diode. The cw operation up to a heat sink temperature of 40 °C was demonstrated on a series of narrow ridge-waveguide devices processed with chemically assisted ion beam etched mirrors and high reflective coating on both facets. The shortest wavelength emission under cw operation conditions was 373.5 nm with output powers of more than 1 mW.


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