TITLE

Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

AUTHOR(S)
Kneissl, Michael; Treat, David W.; Teepe, Mark; Miyashita, Naoko; Johnson, Noble M.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2386
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as low as 5 kA/cm² for laser diodes with emission wavelengths between 368 nm and 378 nm and have demonstrated lasing at 363.2 nm at room temperature, the shortest wavelength yet reported for a semiconductor laser diode. The cw operation up to a heat sink temperature of 40 °C was demonstrated on a series of narrow ridge-waveguide devices processed with chemically assisted ion beam etched mirrors and high reflective coating on both facets. The shortest wavelength emission under cw operation conditions was 373.5 nm with output powers of more than 1 mW.
ACCESSION #
9465125

 

Related Articles

  • Voltage-controlled Q switching of InGaAs/InP single quantum well lasers. Berthold, K.; Levi, A. F. J.; Tanbun-Ek, T.; Logan, R. A.; Chu, S. N. G. // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p1940 

    The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intracavity loss modulator have been investigated. We demonstrate efficient voltage-controlled tuning of the lasing threshold current over more than one order of...

  • Gain characteristics of strained quantum well lasers. Welch, D. F.; Streifer, W.; Schaus, C. F.; Sun, S.; Gourley, P. L. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p10 

    InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm-1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient...

  • Threshold currents of 1.55...m InGaAs/InGaAsP multiple quantum well laser diodes. Kakimoto, Syoichi; Takagi, Kazuhisa; Watanabe, Hitoshi; Higuchi, Hideo // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p1820 

    Presents information relating to the experimental and theoretical investigation of threshold currents of 1.55 ...m InGaAs/InGaAsP multiple quantum well (MQW) with distributed feedback (DFB) laser diodes (LDs). Consistency of the LDs; Reference to the changing of barrier composition; Information...

  • Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves. Kim, J. G.; Shterengas, L.; Martinelli, R. U.; Belenky, G. L.; Garbuzov, D. Z.; Chan, W. K. // Applied Physics Letters;10/21/2002, Vol. 81 Issue 17, p3146 

    We have characterized 2.5-µm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-µm-wide aperture at a temperature of 12 ° C. The threshold current density is 250 A/cm², and the external quantum efficiency near threshold is 0.36....

  • Optimization of stripe width for low-threshold operation of quantum well laser diodes. Osinski, J. S.; Dzurko, K. M.; Hummel, S. G.; Dapkus, P. D. // Applied Physics Letters;6/18/1990, Vol. 56 Issue 25, p2487 

    An experimentally verified model for threshold current in GaAs/AlGaAs quantum well laser diodes has been extended to calculate for the first time the dependence of threshold current on stripe width. The lowest possible threshold is shown to occur when the lateral confinement factor is in the...

  • Higher efficiency InGaN laser diodes with an improved quantum well capping configuration. Hansen, M.; Piprek, J.; Pattison, P. M.; Speck, J. S.; Nakamura, S.; DenBaars, S. P. // Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4275 

    A thin A1GaN cap is typically employed above the multiple quantum wells of InGaN-based lasers to prevent electron overflow from the active region and to protect the InGaN active region from the high temperature growth of subsequent p-type layers. The growth conditions and placement of this cap...

  • Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes. Givens, M. E.; Mawst, L. J.; Zmudzinski, C. A.; Emanuel, M. A.; Coleman, J. J. // Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p301 

    The device performance of graded barrier quantum well laser diodes with various buffer layer structures grown by metalorganic chemical vapor deposition has been studied. Devices having four structures (a GaAs buffer layer only, a compositionally graded buffer layer, a superlattice buffer layer,...

  • Gain characteristics of InGaN/GaN quantum well diode lasers. Song, Y.-K.; Kuball, M.; Nurmikko, A. V.; Bulman, G. E.; Doverspike, K.; Sheppard, S. T.; Weeks, T. W.; Leonard, M.; Kong, H. S.; Dieringer, H.; Edmond, J. // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom...

  • 4 W quasi-continuous-wave output power from 2 microm AlGaAsSb/InGaAsSb single-quantum-well.... Garbuzov, D.Z.; Martinelli, R.U. // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p2931 

    Examines fabricated aluminum gallium arsenic/indium gallium antimony single-quantum-well (SWQ) laser diodes emitting at 2 microm. Exhibition of cavity lengths by uncoated SQW lasers; Factors contributing to the deterioration of SQW laser diodes performance; Analysis on maximum differential...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics