Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

Tolle, J.; Roucka, R.; Tsong, I. S. T.; Ritter, C.; Crozier, P. A.; Chizmeshya, A. V. G.; Kouvetakis, J.
April 2003
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2398
Academic Journal
Growth of metallic and reflecting ZrB[sub 2] films is conducted on Si(111) substrates at 900 °C using a single-source unimolecular precursor Zr(BH[sub 4])[sub 4] in a molecular beam epitaxy chamber. Epitaxial growth of ZrB[sub 2](0001) is accomplished despite the very large lattice mismatch between ZrB[sub 2] and Si(l11). High-resolution cross-sectional transmission electron microscopy images of the sharp ZrB[sub 2]/Si(111) interface show a heteroepitaxial relationship involving a "magic mismatch" of coincidence lattices. The GaN films grown on the ZrB[sub 2]/Si(111) template is virtually homoepitaxy because of the very small lattice mismatch, 0.6%, between the in-plane lattice parameters of ZrB[sub 2](0001) and GAN(0001).


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