In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy

Granados, Daniel; Garcıa, Jorge M
April 2003
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2401
Academic Journal
The effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As[sub 4] atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As[sub 2] atmosphere instead of As[sub 4] at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape.


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