Study of interfacial reaction and its impact on electric properties of Hf–Al–O high-k gate dielectric thin films grown on Si

Lee, P. F.; Dai, J. Y.; Wong, K. H.; Chan, H. L. W.; Choy, C. L.
April 2003
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2419
Academic Journal
Amorphous thin films of Hf-Al-O (with atomic ratio of A1/Hf of about 1.4) were deposited on (100) p-Si substrates by pulsed-laser deposition using a HfO[sub 2] and Al[sub 2]O[sub 3] composite target. Transmission electron microscopy was employed for a detailed study of the interfacial reaction between the Hf-Al-O films and the Si substrates. Islands of Hf silicide formed from interfacial reaction were observed on the surface of the Si substrate. The formation of Hf silicide is attributed to the presence of A1 oxide in the films that triggers the reaction between Hf atoms in the amorphous Hf-Al-O films and Si under an oxygen deficient condition. The impact of silicide formation on the electrical properties was revealed by high-frequency capacitance-voltage (C-V) measurements on metal-oxide-semiconductor capacitors. The observed abnormal C-V curve due to interfacial reaction was discussed.


Related Articles

  • High-k Gate Dielectrics of Thin Films with its Technological Applications - A Review.  // International Journal of Pure & Applied Sciences & Technology;Jun2011, Vol. 4 Issue 2, p105 

    The article presents a study which examines the use of high-k gate dielectrics to suppress excessive transistor gate leakage and demonstrate how power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. The authors evaluated...

  • Electrical conduction and dielectric breakdown in sputter-deposited silicon dioxide films on silicon. Suyama, S.; Okamoto, A.; Serikawa, T.; Tanigawa, H. // Journal of Applied Physics;9/15/1987, Vol. 62 Issue 6, p2360 

    Presents a study which measured electrical conduction and dielectric breakdown in oxygen-argon sputter-deposited film using metal-oxide-semiconductor capacitors and compared with those in thermal dioxide film. Mechanisms of electrical conduction observed in insulators; Models proposed to...

  • Enhanced thermal stability of high-dielectric Gd[sub 2]O[sub 3] films using ZrO[sub 2] incorporation. Cho, M.-H.; Moon, D. W.; Park, S. A.; Rho, Y. S.; Kim, Y. K.; Jeong, K.; Chang, C. H.; Gu, J. H.; Lee, J. H.; Choi, S. Y. // Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p678 

    The thermal stability of Gd[sub 2]O[sub 3] films, containing added Zr, was investigated using various techniques. The structural characteristics of epitaxial Gd[sub 2]O[sub 3] are maintained on the Si(111) substrate when the Zr is codeposited along with Gd. The incorporation of ZrO[sub 2] into...

  • Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate. Nan Wu; Qingchun Zhang; Chunxiang Zhu; Chia Chin Yeo; Whang, S.J.; Chan, D.S.H.; Li, M.F.; Byung Jin Cho; Chin, Albert; Dim-Lee Kwong; Du, A.Y.; Tung, C.H.; Balasubramanian, N. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3741 

    Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2 as the dielectric and TaN as the metal gate electrode. It is demonstrated that a surface annealing step in NH3 ambient before the HfO2 deposition could result in...

  • Excellent electrical and reliability characteristics of 11 Ã… oxynitride gate dielectrics by remote plasma nitridation treatment. Tung-Ming Pan // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p112904 

    Ultrathin oxynitride gate dielectrics of similar thickness (∼1.1 nm) fabricated by a rapid thermal NO-nitrided oxide (RTNO), a RTNO with remote plasma nitridation (RPN) treatment (RTNO-RPN), an in situ steam generated (ISSG) NO oxide, and an ISSG with RPN treatment (ISSG-RPN) are...

  • Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications. Liu, J.-M.; Shi, G.H.; Yu, L.C.; Li, T.L.; Liu, Z.G.; Dai, J.Y. // Applied Physics A: Materials Science & Processing;May2005, Vol. 80 Issue 8, p1775 

    Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal-oxide-semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical...

  • Cmos Downsizing: Present, Past And Future. Siti Sarah Binti, Md. Sallah; Mohamed, Habibah; Mamun, Md.; Syedul Amin, Md. // Journal of Applied Sciences Research;Aug2012, Vol. 8 Issue 8, p4138 

    The evolution process of Complementary Metal Oxide Semiconductor (CMOS) is very important for the modern technology. CMOS beyond 22nm and toward 7nm faced many challenges and opportunities in design.The downsizing evolution is reviewed on scaling theory as well as limitation issues focusing on...

  • Microscopic model for enhanced dielectric constants in low concentration SiO[sub 2]-rich noncrystalline Zr and Hf silicate alloys. Lucovsky, G.; Rayner, G. B.; Rayner Jr., G.B. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    Dielectric constants, k, of Zr(Hf) silicate alloy gate dielectrics obtained from analysis of capacitance-voltage curves of metal-oxide-semiconductor capacitors with 3-6 at. % Zr(Hf) are significantly larger than estimates of k based on linear extrapolations between SiO[sub 2] and compound...

  • Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks. Xu, Zhen; Houssa, Michel; Carter, Richard; Naili, Mohamed; De Gendt, Stefan; Heyns, Marc // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p10127 

    Defect generation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks under constant voltage stress is investigated. It is found that the stress induced electrical degradation in HfO[sub 2]/SiO[sub 2] stacks is different than in the SiO[sub 2] layer. The variation of the gate leakage current with...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics