TITLE

Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm

AUTHOR(S)
Liu, H. F.; Peng, C. S.; Pavelescu, E.-M.; Karirinne, S.; Jouhti, T.; Valden, M.; Pessa, M.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2428
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
X-ray diffraction, x-ray-induced photoelectron emission, and low-temperature photoluminescence have been used to investigate structural and optical properties of near-surface Ga[sub l - x]In[sub x]N[sub y]As[sub 1 - y]/GaAs double quantum wells. The evolution of x-ray diffraction fringes, due to post-growth annealing, provides evidence for In/Ga interdiffusion at elevated temperatures. Photoelectron spectra indicate that indium tends to re-evaporate from the surface. Photoluminescence exhibits a strong feature, as part of the GalnNAs/GaAs material system. This feature is assigned to a hybridized state that is created by an interaction between surface states and quantum-confined states of the near-surface quantum well.
ACCESSION #
9465111

 

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