TITLE

Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes

AUTHOR(S)
Nakano, Yoshitaka; Kachi, Tetsu; Jimbo, Takashi
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2443
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature effect on the variation of photoinduced third-harmonic generation (THG) of an azo-polyurethane homopolymer and an azo guest-host polymer is studied at several different temperatures. At higher temperatures, both angular hole burning and molecule angular redistribution motions weaken, due to the decreases of cis-to-trans thermal relaxation time and the cis population and the increase of orientational diffusion coefficient. Smaller photoinduced THG variation is observed in both samples at higher temperatures. Results from the THG recovery experiment show that polyurethane homopolymer thin films pumped at a high temperature have the best photoinduced THG variation stability after turning off the pump beam.
ACCESSION #
9465106

 

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