TITLE

Hot-phonon bottleneck in the photoinjected plasma in GaN

AUTHOR(S)
Vasconcellos, A. R.; Luzzi, R.; Rodrigues, C. G.; Freire, V. N.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2455
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The evolution on the picosecond scale of the macroscopic (nonequilibrium thermodynamic) state of a highly excited photoinjected plasma in bulk GaN is analyzed. We present the equations of evolution for the quasitemperature (level of excitation) of the hot carriers and of the optical phonons. A hot-phonon temperature overshoot is evidenced, as well as a preferential production of phonons in excess of equilibrium in a reduced off-center region of the Brillouin zone. A comparative analysis of the influence of the length of the exciting laser pulse is also performed.
ACCESSION #
9465102

 

Related Articles

  • Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire. Hansen, M.; Fini, P.; Zhao, L.; Abare, A. C.; Coldren, L. A.; Speck, J. S.; DenBaars, S. P. // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p529 

    InGaN multiple-quantum-well laser diodes have been fabricated on fully coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown "wing" regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on these...

  • Theoretical modeling of nonequilibrium optical phonons and electron energy relaxation in GaN. Tsai, Chin-Yi; Chen, Chih-Hsiung // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1475 

    Presents information on a study which investigated the effect of of the zone-longitudinal optical phonon and transverse optical phonons on the electron energy relaxation rate of gallium nitride-based light-emitting diodes. Theoretical model; Results and discussion; Conclusions.

  • Resonant modes in monolithic nitride pillar microcavities. Lohmeyer, H.; Sebald, K.; Gutowski, J.; Kr�ger, R.; Kruse, C.; Hommel, D.; Wiersig, J.; Jahnke, F. // European Physical Journal B -- Condensed Matter;Dec2005, Vol. 48 Issue 3, p291 

    GaN-based airpost pillar microcavities are realized by focused-ion beam etching starting from an all-epitaxially grown vertical-cavity surface-emitting laser structure. Pillar diameters below 1 �m are well controllable. The sidewalls are smooth and show a damaged surface layer of a...

  • Atomic gallium laser spectroscopy with violet/blue diode lasers. Maragó, O.M.; Fazio, B.; Gucciardi, P.G.; Arimondo, E. // Applied Physics B: Lasers & Optics;Dec2003, Vol. 77 Issue 8, p809 

    We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration has enabled us to investigate of absorption spectroscopy in a gallium hollow cathode. We have analyzed the Doppler-broadened profiles,...

  • Gallium nitride-based, double-heterostructure diode laser emits blue light.  // Laser Focus World;Mar98, Vol. 34 Issue 3, p11 

    Reports on Boston University researchers' development of the first gallium-nitride based, double-heterostructure diode laser to emit blue light. Diode laser's development process; Expectations on the double heterostructure; Avoidance of potential problems such as high resistance and nonuniform...

  • Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (1122) GaN substrate. Kojima, K.; Funato, M.; Kawakami, Y.; Masui, S.; Nagahama, S.; Mukai, T. // Applied Physics Letters;12/17/2007, Vol. 91 Issue 25, p251107 

    The stimulated emissions from semipolar InGaN laser diode (LD) structures grown on ([formula]) GaN substrates are observed at room temperature under photopumped conditions. The measured emission peaks are in the photon energy range from 2.62 eV (474 nm) to 3.05 eV (405 nm), and the emission...

  • Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality. Castiglia, A.; Carlin, J.-F.; Feltin, E.; Cosendey, G.; Dorsaz, J.; Grandjean, N. // Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p111104 

    We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer positioned below an Al0.07Ga0.93N bottom...

  • Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN. Tsen, K.T.; Ferry, D.K. // Applied Physics Letters;9/29/1997, Vol. 71 Issue 13, p1852 

    Measures electron-longitudinal optical phonon scattering rates in wurtzite gallium nitride. Use of subpicosecond time-resolved Raman spectroscopy; Generation of ultrashort, ultraviolet laser pulses by a frequency-quadrupled mode-locked titanium-sapphire laser; Application of the electron...

  • Non-equilibrium Green's function calculation for GaN-based terahertz-quantum cascade laser structures. Yasuda, H.; Kubis, T.; Hosako, I.; Hirakawa, K. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 8, p083105 

    We theoretically investigated GaN-based resonant phonon terahertz-quantum cascade laser (QCL) structures for possible high-temperature operation by using the non-equilibrium Green's function method. It was found that the GaN-based THz-QCL structures do not necessarily have a gain sufficient for...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics