TITLE

Early self-assembled stages in epitaxial SrRuO[sub 3] on LaAlO[sub 3]

AUTHOR(S)
Vasco, E.; Dittmann, R.; Karthäuser, S.; Waser, R.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2497
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The stress-induced self-assembled growth of SrRuO[sub 3] on LaAlO[sub 3] was studied by atomic force microscopy and x-ray diffraction. SrRuO[sub 3] epitaxially grown on LaAlO[sub 3] by pulsed laser deposition shows two types of out-of-plane arrangements and four in-plane matches. The lattice mismatch (stress) produced by these arrangements was estimated and correlated with the SrRuO[sub 3] growth dynamics. After 1 nm, the SrRuO[sub 3] film surface exhibits a ripple structure, which serves as a template for the development of a nanopattern of fiat islands. These islands coalesce anisotropically resulting in a regular array of "infinite" wires. The wire coalescence for the 12-20 nm thick film nullifies the surface symmetry, while SrRuO[sub 3] keeps growing in three dimensions.
ACCESSION #
9465088

 

Related Articles

  • Growth and Structure of Ge Nanoislands on an Atomically Clean Silicon Oxide Surface. Nikiforov, A.I.; Ul'yanov, V.V.; Pchelyakov, O.P.; Teys, S.A.; Gutakovski&icaron;, A.K. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p77 

    Experimental data on the formation of self-organized Ge islands on an atomically clean oxidized Si(100) surface are presented. On the oxidized silicon surface, the Volmer–Weber growth mechanism is operative rather than the Stranski–Krastanow mechanism, which operates in the case of...

  • InGaN nanorings and nanodots by selective area epitaxy. Chen, P.; Chua, S. J.; Wang, Y. D.; Sander, M. D.; Fonstad, C. G. // Applied Physics Letters;10/3/2005, Vol. 87 Issue 14, p143111 

    An integrated process to fabricate controllable arrays of semiconductor nanorings and nanodots on patterned surfaces is presented. This approach is based on pattern transfer of nanopores to a SiO2 layer, followed by selective epitaxial growth of InGaN onto an underlying GaN substrate using...

  • High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns. Jamet, Matthieu; Barski, André; Devillers, Thibaut; Poydenot, Valier; Dujardin, Romain; Bayle-Guillemaud, Pascale; Rothman, Johan; Bellet-Amalric, Edith; Marty, Alain; Cibert, Joël; Mattana, Richard; Tatarenko, Serge // Nature Materials;Aug2006, Vol. 5 Issue 8, p653 

    The emerging field of spintronics would be dramatically boosted if room-temperature ferromagnetism could be added to semiconductor nanostructures that are compatible with silicon technology. Here, we report a high-TC (>400K) ferromagnetic phase of (Ge,Mn) epitaxial layer. The manganese content...

  • A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces. Geng, Peter; Márquez, Juan; Geelhaar, Lutz; Platen, Jutta; Setzer, Carsten; Jacobi, Karl // Review of Scientific Instruments;Feb2000, Vol. 71 Issue 2, p504 

    A compact ultrahigh vacuum (UHV) system has been built to study growth and properties of III/V semiconductor surfaces and nanostructures. The system allows one to grow III/V semiconductor surfaces by molecular beam epitaxy (MBE) and analyze their surface by a variety of surface analysis...

  • Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate. Senz, St.; Ka¨stner, G.; Go¨sele, U.; Gottschalch, V. // Applied Physics Letters;2/7/2000, Vol. 76 Issue 6 

    A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a "compliant substrate." Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no...

  • Spectroscopic observation of developing InAs quantum dots on GaAs ringlike-nanostructured templates. Mazur, Yu. I.; Abu Waar, Z. Y.; Mishima, T. D.; Lee, J. H.; Tarasov, G. G.; Liang, B. L.; Dorogan, V. G.; Ware, M. E.; Wang, Zh. M.; Johnson, M. B.; Salamo, G. J. // Journal of Applied Physics;Aug2008, Vol. 104 Issue 4, p044310 

    Spectroscopic study of the InAs quantum dot (QD) formation in GaAs ringlike nanostructures is carried out. Ga droplet epitaxy is used to form GaAs ringlike nanostructures. Subsequently InAs is deposited to obtain InAs QDs by self-assembly inside the holes of the nanostructures. Regularly spaced...

  • MOVPE of structures with aluminum nanocluster layers in a GaAs matrix. Vostokov, N. V.; Danil'tsev, V.; Drozdov, Yu. N.; Pryakhin, D. A.; Shashkin, V. I.; Shuleshova, I. Yu. // Technical Physics Letters;May2007, Vol. 33 Issue 5, p444 

    Metalorganic vapor phase epitaxy (MOVPE) was used to grow semiconductor structures comprising a GaAs single crystal matrix with incorporated layers of aluminum nanoclusters (Al-NCs). A new regime of GaAs overgrowth on Al-NC layers is proposed, which ensures planarization of the semiconductor...

  • Low-frequency 1/f-noise in (La0.7Sr0.3MnO3)0.95:(MgO)0.05 nanocomposite films. Esseling, M.; Moshnyaga, V.; Samwer, K.; Marx, A.; Gross, R. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p082509 

    The (La0.7Sr0.3MnO3)0.95:(MgO)0.05 nanocomposite system (LSMO:MgO) shows a low-field magnetoresistance up to 30% at low temperatures. The low-frequency 1/f-noise was investigated extensively to characterize the LSMO/MgO interface. The noise was found to be independent of both an applied magnetic...

  • Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition. Gherasimova, M.; Cui, G.; Jeon, S.-R.; Ren, Z.; Martos, D.; Han, J.; He, Y.; Nurmikko, A. V. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2346 

    Optically active GaN quantum dots on conductive AlGaN templates are synthesized by droplet heteroepitaxy, whereby the Ga droplets are converted to GaN islands in the presence of ammonia at 600°C. We have investigated the evolution of metallic Ga layers on AlGaN, obtaining the optimal surface...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics