TITLE

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc[sub 2]O[sub 3] as the gate oxide and surface passivation

AUTHOR(S)
Mehandru, R.; Luo, B.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2530
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrated that Sc[sub 2]O[sub 3] thin films deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs). The maximum drain source current, I[sub DS], reaches a value of over 0.8 A/mm and is ∼40% higher on Sc[sub 2]O[sub 3]/AlGaN/GaN transistors relative to conventional HEMTs fabricated on the same wafer. The metal-oxide-semiconductor HEMTs (MOS-HEMTs) threshold voltage is in good agreement with the theoretical value, indicating that Sc[sub 2]O[sub 3] retains a low surface state density on the A1GaN/GaN structures and effectively eliminates the collapse in drain current seen in unpassivated devices. The MOS-HEMTs can be modulated to +6 V of gate voltage. In particular, Sc[sub 2]O[sub 3] is a very promising candidate as a gate dielectric and surface passivant because it is more stable on GaN than is MgO.
ACCESSION #
9465077

 

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