Temperature-induced phase separation in chromium films

Saraf, Laxmikant; Wang, Chongmin; Engelhard, Mark H.; Baer, Donald R.
April 2003
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2230
Academic Journal
Vacuum evaporation of chromium on Si(100) results in an interfacial nanophase layer followed by a mixed grain region. In this work, the mixed grain region in chromium is nearly transformed into a single-phase region, which resulted in a maximum phase separation between the nano-δ-A15 phase and bulk α-bcc chromium. It is achieved by creating a temperature gradient across the chromium-silicon interface by using rapid evaporation at a growth rate of ∼3 μm/min at a source-to-substrate (SS) distance of 2 cm. Separately grown nanophase chromium films at SS distance of 32 cm show a predominant δ-A15 phase. Short-SS-distance rapid evaporation has the potential to produce selective phase separation by combining the temperature gradient with interfacial stress.


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