Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia

Becker, Jill S.; Gordon, Roy G.
April 2003
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2239
Academic Journal
Highly uniform, smooth, and conformal coatings of tungsten nitride (WN) were synthesized by atomic layer deposition (ALD) from vapors of bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia. The films are shiny, silver colored, and electrically conducting. The films were amorphous as deposited. 100% step coverage was obtained inside holes with aspect ratios greater than 40:1. WN films as thin as 1.5 nm proved to be good barriers to diffusion of copper for temperatures up to 600°C. Annealing for 30 min at temperatures above 725°C converted the WN to pure, polycrystalline tungsten metal. ALD of copper onto the surface of the WN produced strongly adherent copper films that could be used as "seed" layers for chemical vapor deposition or electrodeposition of thicker copper coatings.


Related Articles

  • Functionalization of N to NH via direct N ≡ N bond cleavage using M(III)(NMe) (M=W/Mo): A theoretical study. BASKARAN, SAMBATH; BALU, PERUMAL; SIVASANKAR, CHINNAPPAN // Journal of Chemical Sciences;Jan2015, Vol. 127 Issue 1, p83 

    Atmospheric N can be cleaved directly to yield metal-nitride (before proceeding to the functionalization of N of coordinated N) and subsequently functionalized to ammonia using M(III)(NMe) (M = W/Mo) as a catalyst, and suitable proton and electron sources. The calculated energies of...

  • Self-aligned TiN barrier formation by rapid thermal nitridation of TiSi2 in ammonia. Kamgar, Avid; Baiocchi, F. A.; Emerson, A. B.; Sheng, T. T.; Vasile, M. J.; Haynes, Richard W. // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2395 

    Deals with a study of the nitridation of TiSi[sub2] layers in a RTA system using pure ammonia. Experimental details; Results and discussion; Conclusion.

  • Nanotube growth during annealing of mechanically milled Boron. Fitz Gerald, J.D.; Chen, Y.; Conway, M.J. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 1, p107 

    Boron powder, finely ground in a tungsten carbide ball mill in an ammonia atmosphere, has been annealed at 1200 �C in flowing nitrogen to produce small quantities of cylindrical BN nanotubes, both as isolated individuals and grouped into ropes. Thick-walled conical BN tubes are abundant in...

  • Nanosensor Technology. Joshi, Rakesh K.; Bhansali, Sekhar // Journal of Nanomaterials;2008 Special Issue 4, p1 

    The article discusses various reports published within the issue, including one about the improvement in ammonia sensitivity of tin oxide thin films using high-energy nitrogen ion irradiation, and another one focusing on the ambient pressure synthesis of tungsten oxide nanowires.

  • Tungsten/titanium nitride low-resistance interconnections durable for high-temperature processing. Nakasaki, Y.; Suguro, K.; Shima, S.; Kashiwagi, M. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3263 

    Describes a developed tungsten/titanium nitride (TiN) bilayer interconnections. Details on the minimum thickness of TiN; Information on the silicidation rage in the tungsten/TiN/silicon system; Experiment and result of the study.

  • Stable, self-aligned TiNxOy/TiSi2 contact formation for submicron device applications. Ku, Y. H.; Louis, E.; Shih, D. K.; Lee, S. K.; Kwong, D. L.; Alvi, N. S. // Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1598 

    The formation of the TiNxOy/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 has been studied. The chemical stability in dilute HF and the effectiveness of TiNxOy on TiSi2 as a diffusion barrier for Al are discussed. The results show that this bilayer has good...

  • High-field electron capture and emission in nitrided oxides. Terry, F. L.; Wyatt, P. W.; Naiman, M. L.; Mathur, B. P.; Kirk, C. T.; Senturia, S. D. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2036 

    Examines electron trapping and reemission processes in ammonia-annealed silicon dioxide by using high-field, constant current injection. Functions of ammonia-annealed silicon dioxide; Kinetics of oxide nitridation; Effects of nitridation and annealing times on trap parameters.

  • Low temperature synthesis of Al-AlN composites from a nanostructure made by controlled magneto-ball milling of Al in ammonia. Calka, A.; Nikolov, J. I.; Wantenaar, G. H. J. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p4953 

    Discusses a study on the formation of an aluminum nitride compound in ball milled in ammonia. Use of a magneto-ball milling device; Introduction to aluminum nitride; Experimental method; Results and discussion.

  • GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source. Yang, Z.; Li, L.K. // Applied Physics Letters;9/18/1995, Vol. 67 Issue 12, p1686 

    Demonstrates the growth of Gallium nitride (GaN) using ammonia as the nitrogen source. Details on the catalytic effect on the GaN surface; Information on the intrinsic limit to the growth rate of GaN; Growth method and resulting materials used in the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics