Molecular beam epitaxy growth of GaAs[sub 1-x]Bi[sub x]

Tixier, S.; Adamcyk, M.; Tiedje, T.; Francoeur, S.; Mascarenhas, A.; Wei, Peng; Schiettekatte, F.
April 2003
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2245
Academic Journal
GaAs[sub 1-x]Bi[sub x] epilayers with bismuth concentrations up to x=3.1% were grown on GaAs by molecular beam epitaxy. The Bi content in the films was measured by Rutherford backscattering spectroscopy. X-ray diffraction shows that GaAsBi is pseudomorphically strained to GaAs but that some structural disorder is present in the thick films. The extrapolation of the lattice constant of GaAsBi to the hypothetical zincblende GaBi alloy gives 6.33±0.06Å. Room-temperature photoluminescence of the GaAsBi epilayers is obtained and a significant redshift in the emission of GaAsBi of ∼84 meV per percent Bi is observed.


Related Articles

  • Initial stage of InAs on GaAs grown by molecular-beam epitaxy studied with low-energy ion.... Kubo, Minoru; Narusawa, Tadashi // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3577 

    Examines the use of low-energy ion scattering in analyzing the initial stage of indium arsenide (InAs) on gallium arsenide grown through molecular beam epitaxy. Correlation between the transition of growth process and surface flatness; Device used in measuring InAs layer strain; Method used in...

  • Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures. Emeleus, C. J.; Whall, T. E.; Smith, D. W.; Kubiak, R. A.; Parker, E. H. C.; Kearney, M. J. // Journal of Applied Physics;4/15/1993, Vol. 73 Issue 8, p3852 

    Deals with a boron modulation-doped silicon/SiGe heterojunctions grown by molecular beam epitaxy. Subband structure in the quantum well; Mobility calculations; Examination on scattering mechanisms.

  • Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs. Dongmo, Pernell; Zhong, Yujun; Attia, Peter; Bomberger, Cory; Cheaito, Ramez; Ihlefeld, Jon F.; Hopkins, Patrick E.; Zide, Joshua // Journal of Applied Physics;Nov2012, Vol. 112 Issue 9, p093710 

    We report room temperature electronic and thermoelectric properties of Si-doped In0.52Ga0.48BiyAs1-y with varying Bi concentrations. These films were grown epitaxially on a semi-insulating InP substrate by molecular beam epitaxy. We show that low Bi concentrations are optimal in improving the...

  • Self-limiting process for the bismuth content in molecular beam epitaxial growth of.... Migita, Shinji; Kasai, Yuji // Applied Physics Letters;12/22/1997, Vol. 71 Issue 25, p3712 

    Demonstrate a technology utilizing self-limiting mechanism for the bismuth content for Bi[sub 2]Sr[sub 2]CuO[sub y] (2201) thin film grown by an atomic layer controlled molecular beam epitaxy. Basis of the technology; Reevaporation of surplus bismuth from the surface; Production of high quality...

  • Influence of ionized impurities on the linewidth of intersubband transitions in GaAs/GaAlAs.... Dupont, E.B.; Delacourt, D. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2121 

    Investigates the influence of ionized impurities on the linewidth of intersubband transitions in gallium arsenide/gallium aluminum arsenide quantum wells. Factors attributed to the mid-infrared transition linewidth; Influence of temperature on the scattering process; Use of molecular beam epitaxy.

  • High quality single and double two-dimensional electron gases grown by metalorganic vapor phase.... Chui, H.C.; Hammons, B.E. // Applied Physics Letters;9/25/1995, Vol. 67 Issue 13, p1911 

    Reports the use of metalorganic vapor phase epitaxy (MOVPE) on two dimensional electron gases. Dependence on temperature and carrier density; Application of MOVPE capability to the growth of coupled double 2DEG; Limitation of the background of ionized impurity scattering.

  • Electrical and optical properties of the CdS quantum wells of CdS/ZnSe heterostructures. Dremel, M.; Priller, H.; Grün, M.; Klingshirn, C.; Kazˇukauskas, V. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p6142 

    Earlier we reported the investigation of the electrical properties of selectively doped and degenerate CdS/ZnSe quantum heterostructures grown by molecular beam epitaxy [V. Ka&zbreve;ukauskas, M. Grün, St. Petillon, A. Storzum, and C. Klingshirn, Appl. Phys. Lett. 74, 395 (1999)]. The maximum...

  • Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures. Kaun, Stephen W.; Burke, Peter G.; Hoi Wong, Man; Kyle, Erin C. H.; Mishra, Umesh K.; Speck, James S. // Applied Physics Letters;12/24/2012, Vol. 101 Issue 26, p262102 

    AlxGa1-xN/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of ∼2 × 1010, ∼5 × 108, and ∼5 × 107 cm-2, respectively. All...

  • In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells. Ghezzi, C.; Cioce, B.; Magnanini, R.; Parisini, A. // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5166 

    Results are reported regarding in-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells. In the samples, which were grown by molecular beam epitaxy, only the central regions of the Al[sub 0.40]Ga[sub 0.60]Sb barriers were Te doped. Low-field, low-temperature Hall...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics