Dielectric functions (1 to 5 eV) of wurtzite Mg[sub x]Zn[sub 1-x]O (x≤0.29) thin films

Schmidt, R.; Rheinländer, B.; Schubert, M.; Spemann, D.; Butz, T.; Lenzner, J.; Kaidashev, E. M.; Lorenz, M.; Rahm, A.; Semmelhack, H. C.; Grundmann, M.
April 2003
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2260
Academic Journal
The optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite Mg[sub x]Zn[sub 1-x]O(0 ≤ x ≤ 0.29) thin films have been determined at room temperature using ellipsometry for photon energies from 1 to 5 eV. The dielectric functions reveal strong excitonic contributions for all Mg concentrations x. The band gap energies (E[sup A, sub 0] =3.369 eV for ZnO to 4.101 eV for x =0.29) show a remarkable blueshift. The exciton binding energy (61 meV for ZnO) decreases to approximately 50 meV for x ≈ 0.17 and increases to approximately 58 meV for x =0.29. In contrast to ZnO, the Mg[sub x]Zn[sub 1-x]O alloys are found uniaxial negative below the band gap energy, opposite to previously reported results.


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