In situ preparation and interface characterization of TiO[sub 2]/Cu[sub 2]S heterointerface

Liu, Guangming; Schulmeyer, T.; Thissen, A.; Klein, A.; Jaegermann, W.
April 2003
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2269
Academic Journal
The electronic structures and interface properties of the TiO[sub 2]/Cu[sub 2]S interface have been in situ studied after each growth step by x-ray and ultraviolet photoelectron spectroscopy. The p-doped Cu[sub 2]S films (BE[sub VBM]=0.1 eV) were grown on the highly n-doped chemical vapor deposition prepared TiO[sub 2] (BE[sub VBM] = 3.4 eV) films by thermal evaporation in a multistep growth procedure. The conduction band offset (0.7 eV), valence band offset (2.9 eV) and interface dipole (0.5 eV) were determined based on the quantitative examination of band bending occurring in the Cu[sub 2]S films at higher coverage, leading to a staggered energy level configuration.


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