TITLE

In situ preparation and interface characterization of TiO[sub 2]/Cu[sub 2]S heterointerface

AUTHOR(S)
Liu, Guangming; Schulmeyer, T.; Thissen, A.; Klein, A.; Jaegermann, W.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2269
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic structures and interface properties of the TiO[sub 2]/Cu[sub 2]S interface have been in situ studied after each growth step by x-ray and ultraviolet photoelectron spectroscopy. The p-doped Cu[sub 2]S films (BE[sub VBM]=0.1 eV) were grown on the highly n-doped chemical vapor deposition prepared TiO[sub 2] (BE[sub VBM] = 3.4 eV) films by thermal evaporation in a multistep growth procedure. The conduction band offset (0.7 eV), valence band offset (2.9 eV) and interface dipole (0.5 eV) were determined based on the quantitative examination of band bending occurring in the Cu[sub 2]S films at higher coverage, leading to a staggered energy level configuration.
ACCESSION #
9428280

 

Related Articles

  • Dependence of (0001) GaN/AIN valence band discontinuity on growth temperature and surface... King, S.W.; Ronning, C.; Davis, R.F.; Benjamin, M.C.; Nemanich, R.J. // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p2086 

    Focuses on a study conducted to determine the heterojunction valence band discontinuity at the (0001) GaN/AIN interface using x ray and ultraviolet photoelectron spectroscopies. Information on the compound semiconductors GaN and AIN; Description of the methodology used in the study; Results of...

  • Electronic states at conducting polymer/conducting oxide interfaces observed using a low-energy... Nakanishi, Naoki; Tada, Kazuya // Applied Physics Letters;7/12/1999, Vol. 75 Issue 2, p226 

    Observes the electronic states at conducting polymer/conducting oxide interfaces using a low-energy photoelectron spectroscopic method. Occurrence at the interfaces of the electron transfer from a conducting polymer to indium tin oxide.

  • Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface. Miura, Yoshinao; Ono, Haruhiko; Ando, Koichi // Applied Physics Letters;7/10/2000, Vol. 77 Issue 2 

    Nitrogen bonding states near oxynitride/Si interfaces in NO-nitrided oxide films were investigated by x-ray photoelectron spectroscopy (XPS). A reoxidation process was used to change the nitrogen location in the depth profile. Charge-up effects on the XPS spectra were removed by considering a...

  • Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems. Cao, Renyu; Miyano, K.; Kendelewicz, T.; Lindau, I.; Spicer, W. E. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p210 

    Cu/GaAs(110) and Cu/InP(110) interfaces prepared at room temperature and 80 K low temperature have been studied using photoelectron spectroscopy. The temperature effect on the interface reactivity and the Fermi level pinning is quite different at these two interfaces despite the fact that the Cu...

  • Abruptness of Au-Si contacts with thin CoSi2 interlayers. Xu, F.; Aldao, C. M.; Vitomirov, I. M.; Weaver, J. H. // Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1946 

    High-resolution synchrotron radiation photoelectron spectroscopy has been used to study Au/Si and Au/CoSi2/Si interface formation at room temperature. Our results show Au-Si intermixing, the absence of a well defined Au-Si compound, and surface segregation of small amounts of Si to the Au...

  • Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface. Friedman, D. J.; Carey, G. P.; Shih, C. K.; Lindau, I.; Spicer, W. E.; Wilson, J. A. // Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p44 

    The room-temperature Ag/(Hg, Cd)Te interface has been studied in ultrahigh vacuum with x-ray and ultraviolet photoelectron spectroscopy. The Ag evaporated onto (Hg, Cd)Te diffuses 102–103 Å into the bulk of the semiconductor, displacing Hg as it does so. The bands bend 0.05–0.1...

  • Band lineup between CdS and ultra high vacuum-cleaved CuInS[sub 2] single crystals. Klien, A.; Loher, T. // Applied Physics Letters;3/10/1997, Vol. 70 Issue 10, p1299 

    Examines interface formation between vacuum evaporated cadmium sulfide and ultrahigh vacuum-cleaved CuInS[sub 2] single crystals by synchrotron excited photoelectron spectroscopy. Determination of valence band discontinuity; Analysis on CdS/CuInSe[sub 2] interfaces; Implication for solar cell...

  • Metal/polymer adhesion enhancement by reactive ion assisted interface bonding and mixing. Wu, P.K.; Lu, T.-M. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2710 

    Investigates the effect of reactive ion assisted interface bonding and mixing (RIAIBM) in metal/polymer adhesion. Use of X-ray photoelectron spectroscopy; Factors responsible for the increase in adhesion strength; Application of RIAIBM on metal-on-polymer and polymer-on-metal systems.

  • Organic semiconductor heterointerfaces containing bathocuproine. Hill, I.G.; Kahn, A. // Journal of Applied Physics;10/15/1999, Vol. 86 Issue 8, p4515 

    Presents a study which investigated four organic semiconductor heterointerfaces containing bathocuproine using ultraviolet photoelectron spectroscopy. Measurement of the relative positions of the vacuum levels and highest occupied molecular orbital levels of the organics at each interface;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics