Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

Sørensen, B. S.; Lindelof, P. E.; Sadowski, J.; Mathieu, R.; Svedlindh, P.
April 2003
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2287
Academic Journal
We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin.


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