Ferromagnetic resonant interband tunneling diode

Vurgaftman, I.; Meyer, J. R.
April 2003
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2296
Academic Journal
We consider the spin-polarizing properties of a ferromagnetic resonant interband tunneling diode based on the type-II InAs/(A1Sb)/GaMnSb/(A1Sb)/InAs heterostructure system. The currentvoltage characteristics are simulated using the effective bond-orbital method, in conjunction with self-consistent treatments of both the electrostatic potential and the magnetic exchange interaction. We find that the device can be employed as either a source of spin-polarized electrons, whose polarity varies with applied bias, or as a spin valve. For example, the polarization of electrons tunneling to the collector from an unpolarized emitter can exceed 75% in either direction.


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