TITLE

Nanoscale electron-beam-stimulated processing

AUTHOR(S)
Rack, P. D.; Randolph, S.; Deng, Y.; Fowlkes, J.; Choi, Y.; Joy, D. C.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2326
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron-beam-stimulated deposition and etching has been investigated as a clean, alternative method for nanoscale selective processing. Depositions using W(CO)[sub 6] and hydrocarbon sources have yielded efficient and selective electron-beam deposits. Primarily fluorine-based precursors have been used to etch a variety of materials. Initial results regarding the selective etching of silicon and silicon dioxide suggest that inelastic scattering of the primary electron beam with the gas occurs and is more severe at lower beam energies. The etch rate increases linearly with decreasing electron-beam energy, however, it is not clear if this is due to enhanced primary- or secondary-electron-stimulated processes. Feature sizes as small as 55 nm have been selectively processed.
ACCESSION #
9428259

 

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