Efficient 3–5-μm negative luminescence from HgCdTe/Si photodiodes

Lindle, J. R.; Bewley, W. W.; Vurgaftman, I.; Meyer, J. R.; Varesi, J. B.; Johnson, S. M.
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2002
Academic Journal
The negative luminescence of a midwave-infrared HgCdTe photodiode (cutoff wavelength =5.3 μm at 295 K) was investigated using a modulated, self-referencing, optical technique. Internal efficiencies were measured to be 88% throughout the 3-5-μm spectral region, nearly independent of temperature in the 240-300-K range. This corresponds to an apparent temperature reduction of greater than 50 K at room temperature and greater than 35 K at 240 K when the reverse bias is applied. The reverse saturation current density of 1.3 A/cm[SUP2] is lower than any reported previously for a negative luminescence device with cutoff wavelength beyond 4 mm.


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