Reaction of SiO[sub 2] with hafnium oxide in low oxygen pressure

Wang, S. J.; Lim, P. C.; Huan, A. C. H.; Liu, C. L.; Chai, J. W.; Chow, S. Y.; Pan, J. S.; Li, Q.; Ong, C. K.
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2047
Academic Journal
A dynamic process consisting of a series of reactions during deposition of HfO[SUB2] films on SiO[SUB2]-covered silicon under oxygen-deficient conditions is identified. The oxygen-deficient HfO[SUBx<2] layer absorbs the oxygen in the SiO[SUB2] layer to form fully oxidized metal oxide film. As a result, there) is no silicate and silicon oxide formed at the interface with silicon substrate. Thermodynamic analysis indicates that even if there is a layer of silicate forming at the initial stage of deposition, the silicate layer will be decomposed with the progress of HfO[SUBx<2] deposition.


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