TITLE

Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

AUTHOR(S)
Dıaz-Guerra, C.; Piqueras, J.; Cavallini, A.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2050
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temporal behavior of deep-level luminescence emissions in undoped hydride-vapor-phase-epitaxy GaN layers of different thicknesses has been investigated by time-resolved cathodoluminescence (TRCL). The complex nature of the yellow luminescence is revealed in the TRCL spectra by the presence of two bands peaked at 2.22 and 2.03 eV. A red band with a decay time of 700 μs, centered at about 1.85 eV, dominates spectra recorded for long delay times. Exponential transients with associated decay times of hundreds of ms were measured at 87 K for all the deep-level emissions found in the layers.
ACCESSION #
9377457

 

Related Articles

  • Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy. Sun, X. L.; Goss, S. H.; Brillson, L. J.; Look, D. C.; Molnar, R. J. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p6729 

    Cathodoluminescence (CL) imaging and temperature-dependent cathodoluminescence spectroscopy (CLS) have been used to probe the spatial distribution and energies of electronic defects near GaN/A1[sub 2]O[sub 3] interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary...

  • Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Usikov, A. S.; Tret�yakov, V. V.; Lundin, V. V.; Zadiranov, Yu. M.; Pushnyi, B. V.; Konnikov, S. G. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p253 

    A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of ~ 1000�C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed...

  • Cathodoluminescence and Raman Scattering in Ga[sub 1 � ][sub x]Al[sub x]P Epitaxial Films. Vodop�yanov, L. K.; Kozlovskii, V. I.; Mel�nik, N. N. // Semiconductors;Apr2000, Vol. 34 Issue 4, p405 

    Low-temperature cathodoluminescence and Raman scattering of Ga[sub 1-x]Al[sub x]P epitaxial layers (0 = x = 0.8) grown by liquid phase epitaxy on the GAP(100) substrate are studied. The obtained cathodoluminescence spectra indicate that the dependence of the indirect energy gap on the...

  • Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy. Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Fang, Z-Q.; Look, D. C.; Park, S. S.; Han, J. H. // Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5238 

    Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) imaging of the freestanding n-GaN samples grown by hydride vapor phase epitaxy were made. Dark-spot defects in plan-view EBIC and MCL images and dark line defects in MCL images taken on the cleaved...

  • Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311)A substrates. No¨tzel, Richard; Jahn, Uwe; Niu, Zhichuan; Trampert, Achim; Fricke, Jo¨rg; Scho¨nherr, Hans-Peter; Kurth, Thomas; Heitmann, Detlef; Da¨weritz, Lutz; Ploog, Klaus H. // Applied Physics Letters;4/20/1998, Vol. 72 Issue 16 

    Three-dimensional arrays of vertically stacked sidewall quantum wires are fabricated by molecular beam epitaxy on GaAs (311)A substrates patterned with 500-nm-pitch gratings. The cathodoluminescence spectra at low temperature are dominated by the emission from the quantum wires with narrow...

  • Panchromatic cathodoluminescence investigation of defects in CdTe bulk crystals and homoepitaxial... Salviati, G.; Franzosi, P. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3257 

    Examines the extended crystal defects in (111) cadmium telluride bulk crystals and homoepitaxial layers grown by liquid phase epitaxy using scanning electron microscopy panchromatic cathodoluminescence. Use of a silicon photoiodide in obtaining defect images; Factors affecting the bulk...

  • Yellow luminescence from precipitates in GaN epilayers. Kang, J.; Ogawa, T. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 6, p631 

    Abstract. The room-temperature photoluminescence spectra of GaN epilayers with different surface morphologies grown by metalorganic vapor phase epitaxy exhibited a near-band-gap emission peak and a broad emission band in the yellow region. The intensity distributions of the yellow luminescence...

  • Inversion domains triggering recovery of luminescence uniformity in epitaxially lateral overgrown thick GaN film. Kim, Chinkyo; Chinkyo Kim; Yi, Jaehyung; Jaehyung Yi; Yang, Min; Min Yang; Kim, Minhong; Minhong Kim; Jeon, Jina; Jina Jeon; Khym, Sungwon; Sungwon Khym; Cho, Meoungwhan; Meoungwhan Cho; Choi, Yoonho; Yoonho Choi; Leem, Shi-Jong; Shi-Jong Leem; Kim, Seon Tai; Seon Tai Kim // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    A 150 μm-thick GaN layer was grown by halide vapor phase epitaxy utilizing selective lateral overgrowth on a SiO[sub 2]-prepatterned sapphire substrate. A series of optically active regions above the SiO[sub 2] mask was observed in cross sectional monochromatic cathodoluminescence images...

  • Edge emission observed in heavily boron-doped diamond films epitaxially grown on platinum. Yokota, Yoshihiro; Tachibana, Takeshi; Miyata, Koichi; Kobashi, Koji; Hatta, Akimitsu; Ito, Toshimichi; Hiraki, Akio; Shintani, Yoshihiro // Applied Physics Letters;9/14/1998, Vol. 73 Issue 11 

    Cathodoluminescence (CL) spectra of diamond films epitaxially grown on single crystal platinum (111) have been investigated at room temperature and 89 K. It was found that the CL spectra of the heavily boron-doped (>3×10[sup 20] cm[sup -3]) diamond films of more than 16 μm thickness...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics