Proton-irradiation-induced intermixing of InGaAs quantum dots

Lever, P.; Tan, H. H.; Jagadish, C.; Reece, P.; Gal, M.
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2053
Academic Journal
Proton irradiation was used to create interdiffusion in In[SUB0.5]Ga[SUB0.5]As quantum dots (QDs), grown by low-pressure metalorganic chemical vapor deposition. After 25-keV proton irradiation, the QD samples were annealed at two temperatures (700 or 750°C) for 30 s. It was found that much lower annealing temperatures were needed to recover the photoluminescence signals than in the quantum-well case. Large blueshifts (120 meV) and narrowing of the photoluminescence spectra were seen. Various doses (5X10[SUP13]-1X10[SUB15] cm[SUB-2]) and implant temperatures (20-200°C) were used to study the interdiffusion processes in these samples. In QD samples, much lower doses were required to achieve similar energy shifts than reported in quantum-well samples.


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