Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

Gebauer, J.; Weber, E. R.; Jäger, N. D.; Urban, K.; Ebert, Ph.
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2059
Academic Journal
We identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (Te[SUBAs]), Ga vacancies (V[SUBGa), and Ga vacancy-donor complexes (V[SUBGa-Te[SUBAs]). We show quantitatively that the compensation in Te-doped bulk GaAs is exclusively caused by vacancy-donor complexes in contrast to Si-doped GaAs. This is explained with the Fermi-level effect as the universal mechanism leading to Ga vacancy formation in n-doped GaAs, and a Coulomb interaction leading to the formation of the complexes. The quantification of the carrier compensation yields a -3e charge state of V[SUBGa] in bulk GaAs.


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