Thermoelectric properties of Al[sub 1-x]In[sub x]N and Al[sub 1-y-z]Ga[sub y]In[sub z]N prepared by radio-frequency sputtering: Toward a thermoelectric power device

Yamaguchi, Shigeo; Iwamura, Yasuo; Yamamoto, Atsushi
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2065
Academic Journal
With the aim of fabricating a thermoelectric power device using III-nitride semiconductors, we recently studied thermoelectric properties of Al[SUB1-x]In[SUBx]N and Al[SUB1-y-z]Ga[SUBy]In[SUBz]N prepared by rf sputtering. For Al[SUB0.35]In[SUB0.65]N with 0.63-μm thickness, the maximum power factor was 3.63X10[SUP-4] W/mK[SUP2]. For Al[SUB0.26]Ga[SUB0.44]In[SUB0.30]N, the maximum power factor was 5.58 X 10[SUP-5] W/mK[SUP2].


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