Cathodoluminescence and Hall-effect measurements in sulfur-doped chemical-vapor-deposited diamond

Nakazawa, Kazushi; Tachiki, Minoru; Kawarada, Hiroshi; Kawamura, Aki; Horiuchi, Kenji; Ishikura, Takefumi
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2074
Academic Journal
Dominant n-type conductivity in sulfur-doped chemical-vapor-deposited diamond is observed by Hall-effect measurement. The activation energy is estimated at 0.5-0.75 eV above 600 K. Below 600 K, the carrier concentration deviates from the activation energy, and Hall mobility decreases in comparison with that above 600 K. It is considered that hopping conduction takes place. By cathodoluminescence measurement, free-exciton recombination radiation is observed in spite of a very high sulfur doping level of 2.5% during deposition, where boron is not detected by secondary ion mass spectroscopy. Therefore, the n-type conductivity of sulfur-doped diamond is caused by a sulfur-related mechanism.


Related Articles

  • Cathodoluminescence from high-pressure synthetic and chemical-vapor-deposited diamond. Lawson, Simon C.; Kanda, Hisao; Kiyota, Hideo; Tsutsumi, Takahiro; Kawarada, Hiroshi // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1729 

    Presents a study on cathodoluminescence from high-pressure synthetic and chemical-vapor-deposited diamond. Introduction to chemical-vapor deposition; Experimental procedures; Results and discussion.

  • Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition. Kawarada, H.; Yokota, Y.; Mori, Y.; Nishimura, K.; Hiraki, A. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p983 

    Investigates the visible luminescence of undoped and boron-doped diamond formed by plasma-assisted chemical vapor deposition (CVD) by cathodoluminescence (CL). Reaction gases used in the experiment; Variation of CL intensities from undoped CVD diamond with decreasing and increasing temperature;...

  • The incorporation of arsenic in GaN by metalorganic chemical vapor deposition. Li, X.; Kim, S.; Reuter, E. E.; Bishop, S. G.; Coleman, J. J. // Applied Physics Letters;4/20/1998, Vol. 72 Issue 16 

    We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As...

  • Cathodoluminescence and photoluminescence from chemical-vapor-deposited diamond. Yang, Xinxing; Barnes, A. V.; Albert, M. M.; Albridge, R. G.; McKinley, J. T.; Tolk, N. H.; Davidson, J. L. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1758 

    Investigates the cathodoluminescence spectra from mocrowave-plasma-assisted chemical-vapor-deposited (CVD) diamond as a function of temperature at low electron energies. Comparison between the luminescence spectra from CVD diamond films as grown and CVD diamond films annealed by rapid thermal...

  • Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)[sub 2]/(GaP)[sub 2] quantum wires. Rich, D. H.; Tang, Y.; Lin, H. T. // Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p6837 

    The optical properties of (InP)[sub 2]/(GaP)[sub 2] bilayer superlattice (BSL) structures have been examined with linearly polarized cathodoluminescence (CL), time-resolved CL spectroscopy, and cathodoluminescence wavelength imaging. An In and Ga composition modulation of ∼ 18% forms during...

  • Dependence of the cathodoluminescence of diamond films on deposition temperature. Shing, Y. H.; Rich, D. H.; Pool, F. S. // Journal of Applied Physics;6/15/1992, Vol. 71 Issue 12, p6036 

    Provides information on a study that investigated the deposition temperature dependence of the cathodoluminescence of diamond thin films grown by microwave plasma-assisted chemical vapor deposition. Methodology of the study; Result of the study; Conclusions.

  • Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition. Zhang, X. B.; Heller, R. D.; Noh, M. S.; Dupuis, R. D.; Walter, G.; Holonyak, N. // Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p476 

    We report the growth of InP self-assembled quantum dots (QDs) on In[SUB0.5]Al[SUB0.5]P and In[SUB0.5]Al[SUB0.6]Ga[SUB0.4])[SUB0.5]P matrices, lattice matched on 0°, 2°, 6°, and 25° off-axis(100) GaAs substrates by metalorganic chemical vapor deposition. The influence of the substrate...

  • Cathodoluminescence of cubic boron nitride films deposited by chemical vapor deposition. Zhang, W. J.; Kanda, H.; Matsumoto, S. // Applied Physics Letters;10/28/2002, Vol. 81 Issue 18, p3356 

    Cathodoluminescence (CL) characteristics of cubic boron nitride (cBN) films deposited by chemical vapor deposition were investigated. Combined with the results from Fourier-transformed infrared spectroscopy and Raman spectroscopy, the dependence of the emission energy and intensity on the phase...

  • Polarized-cathodoluminescence study of stress for GaAs grown selectively on patterned Si(100). Tang, Y.; Rich, D. H.; Lingunis, E. H.; Haegel, N. M. // Journal of Applied Physics;9/1/1994, Vol. 76 Issue 5, p3032 

    Focuses on a study which examined the spatial variation of stress tensor in selective-area metalorganic chemical-vapor-deposition-grown gallium arsenide on silicon substrate by using a linearly polarized cathodoluminescence (CL) technique. Effect of pattern size on biaxial stress; Temperature...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics