Random networks of carbon nanotubes as an electronic material

Snow, E. S.; Novak, J. P.; Campbell, P. M.; Park, D.
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2145
Academic Journal
We report on the transport properties of random networks of single-wall carbon nanotubes fabricated into thin-film transistors. At low nanotube densities (∼1 μm[SUP-2]) the networks are electrically continuous and behave like a p-type semiconductor with a field-effect mobility of ∼10 cm[SUP2]/V s and a transistor on-to-off ratio ∼10[SUP5]. At higher densities (∼10 μm[SUP-2]) the field-effect mobility can exceed 100 cm[SUP2]/V s; however, in this case the network behaves like a narrow band gap semiconductor with a high off-state current. The fact that useful device properties are achieved without precision assembly of the nanotubes suggests the random carbon nanotube networks may be a viable material for thin-film transistor applications.


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