Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si[sub 1-x]Ge[sub x] (0≤x≤1) on SiO[sub 2]

Kanno, Hiroshi; Tsunoda, Isao; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2148
Academic Journal
Metal-induced low-temperature (≤550°C) crystallization of amorphous-Si[SUB1-x]Ge[SUBx] (0≤x≤1) on SiO[SUB2] (has been investigated. In the case of low Ge fraction (0≤x≤0.2), Ge-doping enhanced plane (growth was observed. This achieved strain-free poly-Si[SUB0.8]Ge[SUB0.2] with large grains (18 μ). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (0.4≤x≤0.6). By optimizing the growth conditions (x: 0.4, annealing: 450°C, 20h), very sharp needle-like crystal regions (width: 0.05 μm, length: 10 μm) were obtained. These polycrystalline SiGe films on SiO[SUB2] should be used for the system-in-display, three-dimensional ultralarge scale integrated circuits, and novel one-dimensional wires.


Related Articles

  • The variation of microstruture in Czochralski silicon induced by low-high two step anneal. Kung, C.Y.; Liu, C.M.; Hsu, W.; Horng, R. H. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p56 

    Studies the variation of microstructure in Czochralski silicon wafers induced by a low-high two step anneal. Description of the defect microstructures observed after low-high two-step and the low-high three-step anneal tests by using 650 degrees Celsius as the low (nucleation) temperature;...

  • Thermocapillary mechanism of pore evaporation during sintering and crystallization of YBa[sub 2]Cu[sub 3]O[sub 7-δ]. Churin, S. A. // Technical Physics Letters;Apr97, Vol. 23 Issue 4, p329 

    The thermocapillary effect is used to explain the phenomenon of shrinkage observed during the annealing of YBa[sub 2]Cu[sub 3]O[sub 7-δ] components. The proposed model can be used to estimate the characteristic time taken for pores to reach the surface of ceramic samples.

  • Degrees of visible determinism in crystal growth striations as a measure of crystal quality. Miyano, Takaya; Morita, Hiroshi; Shintani, Akira; Kanda, Tadashi // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p43 

    A diagnostic test based on the parallelism of neighboring trajectories generated from a time series in phase space for visible determinism is applied to characterizing complexities in growth striations of Czochralski silicon crystals. Change in the structure of the striations by crystal...

  • Crystallization upon thermal annealing of a glass-forming liquid crystal in the nematic regime. Mastrangelo, John C.; Blanton, Thomas N. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2212 

    Describes the occurrence of crystallization upon thermal annealing in glass-forming low molar mass liquid crystal (GLMLC) in nematic regime. Morphological stability of GLMLC; Use of differential scanning calorimetry and x-ray diffraction technique; Persistence of nematic mesophases for longer...

  • Thermal stability of 2.4 nm period Ni-Nb/C multilayer x-ray mirror. Vitta, Satish; Yang, Ping; Ping Yang // Applied Physics Letters;11/27/2000, Vol. 77 Issue 22 

    The structure of Ni-Nb/C multilayers as a function of annealing at 200 and 320 °C has been studied. The layered structure is found to be extremely stable even after annealing at 320 °C. The interdiffused layer present at the two interfaces Ni[sub 1/2]Nb[sub 1/2]/C and C/Ni[sub 1/2]Nb[sub...

  • Te[sub Cd] antistructural defects in CdTe crystals. Matveev, O. A.; Terent�ev, A. I. // Technical Physics Letters;Feb97, Vol. 23 Issue 2, p140 

    Two-temperature annealing with a controlled vapor pressure of tellurium P[sub Te2] is used to study CdTe crystals under conditions of high-temperature thermodynamic equilibrium of the crystal with the gas phase (735-940 �C). For low pressures P[sub Te2] (= P[sub min]) Cl[sub Te[sup +]]...

  • Identification of intrinsic gettering centers in oxygen-free silicon crystals. Ueda, O.; Nauka, K.; Lagowski, J.; Gatos, H. C. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p622 

    Presents information on a study which identified intrinsic gettering centers in oxygen-free silicon crystals after a high-low-medium-temperature annealing cycle using transmission electron microscopy and energy dispersive x-ray spectroscopy. Description of a three-step annealing cycle commonly...

  • New intrinsic gettering process in silicon based on interactions of silicon interstitials. Nauka, K.; Lagowski, J.; Gatos, H. C.; Ueda, O. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p615 

    Presents information on a study which proposed experimental data on an intrinsic gettering process found in silicon crystals subjected to a three-step annealing sequence. Characteristics of the intrinsic gettering process; Methodology of the study; Results and discussion.

  • Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon. Miyao, M.; Polman, A.; Sinke, W.; Saris, F. W.; van Kemp, R. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1132 

    High-energy (0.2–0.8 MeV, ≊1017 cm-2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics