TITLE

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si[sub 1-x]Ge[sub x] (0≤x≤1) on SiO[sub 2]

AUTHOR(S)
Kanno, Hiroshi; Tsunoda, Isao; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2148
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal-induced low-temperature (≤550°C) crystallization of amorphous-Si[SUB1-x]Ge[SUBx] (0≤x≤1) on SiO[SUB2] (has been investigated. In the case of low Ge fraction (0≤x≤0.2), Ge-doping enhanced plane (growth was observed. This achieved strain-free poly-Si[SUB0.8]Ge[SUB0.2] with large grains (18 μ). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (0.4≤x≤0.6). By optimizing the growth conditions (x: 0.4, annealing: 450°C, 20h), very sharp needle-like crystal regions (width: 0.05 μm, length: 10 μm) were obtained. These polycrystalline SiGe films on SiO[SUB2] should be used for the system-in-display, three-dimensional ultralarge scale integrated circuits, and novel one-dimensional wires.
ACCESSION #
9377406

 

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