Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”

Pintilie, I.; Fretwurst, E.; Lindström, G.; Stahl, J.
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2169
Academic Journal
Radiation-induced defects in silicon diodes were investigated after exposure to high doses of Co[SUP60]-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in oxygen-enriched material while it is the main cause for the space charge sign inversion effect observed in standard float-zone material.


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