TITLE

InGaAs/InAlAs avalanche photodiode with undepleted absorber

AUTHOR(S)
Li, Ning; Sidhu, Rubin; Li, Xiaowei; Ma, Feng; Zheng, Xiaoguang; Wang, Shuling; Karve, Gauri; Demiguel, Stephane; Holmes, Archie L.; Campbell, Joe C.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2175
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer. The motivation for utilizing an undepleted absorption layer, which is similar to that in the unitraveling carrier photodiode, is to reduce the dark current. A dark current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz are demonstrated.
ACCESSION #
9377397

 

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