InGaAs/InAlAs avalanche photodiode with undepleted absorber

Li, Ning; Sidhu, Rubin; Li, Xiaowei; Ma, Feng; Zheng, Xiaoguang; Wang, Shuling; Karve, Gauri; Demiguel, Stephane; Holmes, Archie L.; Campbell, Joe C.
March 2003
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2175
Academic Journal
We report an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer. The motivation for utilizing an undepleted absorption layer, which is similar to that in the unitraveling carrier photodiode, is to reduce the dark current. A dark current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz are demonstrated.


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