TITLE

Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors

AUTHOR(S)
Schmidt, Jan
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2178
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A highly sensitive, contactless defect characterization technique, temperature- and injection-dependent lifetime spectroscopy (TIDLS), is introduced. In this method, the injection-level-dependent carrier lifetime curves of a semiconductor are measured at various temperatures by means of an inductively coupled resonant circuit. In order to illustrate certain features of the TIDLS, the lifetime-limiting defect center in aluminum-doped Czochralski silicon is analyzed. It is shown that, compared to previous lifetime spectroscopy techniques, TIDLS not only determines the defect energy level with improved accuracy, but is also capable of determining the temperature dependence of the electron and hole capture cross sections. In addition, the method permits the separation between shallow and deep-level centers.
ACCESSION #
9377396

 

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