Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Lundin, W.; Nikolaev, A.; Sakharov, A.; Usov, S.; Zavarin, E.; Brunkov, P.; Yagovkina, M.; Cherkashin, N.; Tsatsulnikov, A.
January 2014
Semiconductors;Jan2014, Vol. 48 Issue 1, p53
Academic Journal
III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.


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