High-power pulse-emitting lasers in the 1.5-1.6 μm spectral region

Gorlachuk, P.; Ryaboshtan, Yu.; Marmalyuk, A.; Kurnosov, V.; Kurnosov, K.; Zhuravleva, O.; Romantsevich, V.; Chernov, R.; Ivanov, A.; Simakov, V.
January 2014
Semiconductors;Jan2014, Vol. 48 Issue 1, p95
Academic Journal
The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of ∼6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ∼110 W.


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