TITLE

Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO/ZrO system containing Si nanoclusters

AUTHOR(S)
Ershov, A.; Pavlov, D.; Grachev, D.; Bobrov, A.; Karabanova, I.; Chugrov, I.; Tetelbaum, D.
PUB. DATE
January 2014
SOURCE
Semiconductors;Jan2014, Vol. 48 Issue 1, p42
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The structural and morphological properties of nanoperiodic structures produced by the alternate vacuum evaporation of SiO and ZrO followed by annealing at temperatures of 500-1100°C are studied by the transmission electron microscopy of a transverse cross section. Upon annealing at temperatures below 700°C, the layers are amorphous. Upon annealing at 900°C and 1000°C, nanocrystals separated by twinned boundaries or amorphous regions are formed in the ZrO layers. The formation of Si nanocrystals in the SiO layers occurs upon annealing at 1000°C and 1100°C. At 1100°C, because of the reaction between SiO and ZrO, spherical SiZrO-type nanocrystals are formed in place of the ZrO layers; the nanocrystal diameters exceed the initial layer thickness. The annealing-induced structural evolution is consistent with the previously considered behavior of the optical and luminescence properties of the system.
ACCESSION #
93447537

 

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