Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO/ZrO system containing Si nanoclusters

Ershov, A.; Pavlov, D.; Grachev, D.; Bobrov, A.; Karabanova, I.; Chugrov, I.; Tetelbaum, D.
January 2014
Semiconductors;Jan2014, Vol. 48 Issue 1, p42
Academic Journal
The structural and morphological properties of nanoperiodic structures produced by the alternate vacuum evaporation of SiO and ZrO followed by annealing at temperatures of 500-1100°C are studied by the transmission electron microscopy of a transverse cross section. Upon annealing at temperatures below 700°C, the layers are amorphous. Upon annealing at 900°C and 1000°C, nanocrystals separated by twinned boundaries or amorphous regions are formed in the ZrO layers. The formation of Si nanocrystals in the SiO layers occurs upon annealing at 1000°C and 1100°C. At 1100°C, because of the reaction between SiO and ZrO, spherical SiZrO-type nanocrystals are formed in place of the ZrO layers; the nanocrystal diameters exceed the initial layer thickness. The annealing-induced structural evolution is consistent with the previously considered behavior of the optical and luminescence properties of the system.


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