Simultaneous two-state lasing in quantum-dot lasers

Markus, A.; Chen, J. X.; Paranthoën, C.; Fiore, A.; Platz, C.; Gauthier-Lafaye, O.
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1818
Academic Journal
We demonstrate simultaneous lasing at two well-separated wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, we attribute it to incomplete clamping of the ES population at the GS threshold.


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