TITLE

Surface segregation of boron in B[sub x]Ga[sub 1-x]As/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

AUTHOR(S)
Dumont, H.; Rutzinger, D.; Vincent, C.; Dazord, J.; Monteil, Y.; Alexandre, F.; Gentner, J. L.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1830
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The behavior of boron incorporation into GaAs has been studied by x-ray photoelectron spectroscopy, x-ray diffraction, and atomic force microscopy. As the boron content of the film was increased, both the characteristic peak for the B 1 s core level at 188 eV and As Auger transition (260 eV) could be detected by XPS. At 550-600 °C, single crystalline films could only be grown for x≤0.06. Upon increasing the diborane flux in the gas phase, the film stoichiometry and the boron surface composition evolved rapidly towards a boron-rich subarsenide compound. This trend is followed by a clear degradation of the surface morphology and an increase in the surface roughness. A surface segregation of boron is suggested due to the high diborane vapor supersaturation needed during growth.
ACCESSION #
9319948

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics