Nitride-mediated epitaxy of CoSi[sub 2] on Si(001)

Chong, R. K. K.; Yeadon, M.; Choi, W. K.; Stach, E. A.; Boothroyd, C. B.
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1833
Academic Journal
Epitaxial layers of CoSi[sub 2] have been grown on Si(100) by the technique of nitride-mediated epitaxy. An ultrathin layer of silicon nitride was formed on the Si(001) surface by exposure to ammonia gas at 900 °C, followed by the deposition of a layer of Co ∼20 Å in thickness at room temperature. The sample was then annealed at 600 °C and the microstructure monitored by in situ transmission electron microscopy and diffraction. The formation of epitaxial islands of CoSi[sub 2] was observed directly, with no evidence of the formation of intermediate phases. The CoSi[sub 2] islands were found to be elongated along the in-plane Si〈110〉 directions, consistent with reports of the deposition of Co by molecular beam epitaxy on clean Si(100) at low deposition rates and elevated temperature. This technique of silicidation may be of particular interest in the fabrication of advanced devices incorporating multilayer oxide/nitride gate stacks.


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