TITLE

Epitaxial growth of CoSi[sub 2] on hydrogen-terminated Si(001)

AUTHOR(S)
Ishida, K.; Miura, Y.; Hirose, K.; Harada, S.; Narusawa, T.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1842
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate that CoSi[sub 2] grows epitaxially on H-terminated Si(001) and present the growth mechanism. It was found that direct reaction of Co with Si is suppressed on H-terminated Si below 400 °C. Thus, the hydrogen at the Co/Si interface hinders the formation of Co[sub 2]Si and CoSi. Upon thermal desorption of hydrogen at around 400-550 °C, CoSi[sub 2], which is closely lattice-matched to Si(001), grows on Si(001) and thus, thin epitaxial CoSi[sub 2] films are formed on Si(001). The {111}-faceting was completely suppressed in the epitaxial CoSi[sub 2]/Si(001), leading to the atomically flat interface.
ACCESSION #
9319936

 

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