TITLE

Excitonic luminescence from nonsymmetric heterovalent AlAs/GaAs/ZnSe quantum wells

AUTHOR(S)
Kudelski, A.; Bindley, U.; Furdyna, J. K.; Dobrowolska, M.; Wojtowicz, T.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1854
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the observation of excitons localized in an asymmetric GaAs quantum well (QW) embedded between AlAs and ZnSe barriers. Samples with different QW thicknesses (10, 15, and 18 monolayers) have been studied, showing clear confining effects in the photoluminescence emission. To achieve confinement in the GaAs QWs, it was necessary to design the band alignment across the AlAs/GaAs/ZnSe layer sequence, and to carefully tailor the growth conditions in order to achieve the required band alignment profile.
ACCESSION #
9319926

 

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