Ultrafast directional nickel-silicide-induced crystallization of amorphous silicon under high-density current stressing

Yu, C. H.; Lin, H. H.; Cheng, S. L.; Chen, L. J.
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1857
Academic Journal
Ultrafast directional crystallization that combined the electric current stressing with metal-induced crystallization has been achieved for BF[sup +, sub 2]-implanted amorphous Si (a-Si) at room temperature. Polycrystalline Si was observed to grow from anode towards cathode and the channels of a-Si strips with a length of 140 µm and a width of 10 µm can be fully crystallized with a stressing time less than 0.2 s. The directional growth of crystalline Si nanowires, 50 nm in width and as long as 3 µm in length, with an extraordinarily high aspect ratio of 60, indicates a strong electric-field-induced effect on the growth. The growth method provides a promising scheme to solve the problems caused by high-temperature and long-term annealing treatment for the applications of optoelectronic devices.


Related Articles

  • Defects in preamorphized single-crystal silicon. Ayres, J. R.; Brotherton, S. D.; Shannon, J. M.; Politiek, J. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2214 

    Direct electrical characterization of 1-μm-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep-level defects within the regrown layer. A deep-level trap at Ec -0.40 eV has been found associated with the amorphous-crystalline...

  • The hardness and Young’s modulus of amorphous hydrogenated carbon and silicon films measured with an ultralow load indenter. Jiang, X.; Reichelt, K.; Stritzker, B. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5805 

    Presents information on a study which determined the hardness (H) and the Young's modulus of amorphous hydrogenated carbon (a-C:H) and silicon films prepared under different conditions. Preparation of a-C:H films on silicon single-crystal substrates; Calculation of the H; Conditions used in the...

  • Pd induced lateral crystallization of amorphous Si thin films. Seok-Woon lee; Yoo-Chan Jeon // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1671 

    Reduces the crystallization of amorphous silicon (a-Si) thin films. Crystallization of a-Si thin films with palladium films; Observation of low-temperature and contamination-free lateral crystallization phenomena; Growth of a thermal oxide film at 1000 Angstrom; Two metal-inducing processes for...

  • On the current mechanism in reverse-biased amorphous-silicon Schottky contacts. II. Reverse-bias current mechanism. Nieuwesteeg, K. J. B. M.; van der Veen, M.; Vink, T. J.; Shannon, J. M. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2581 

    Presents a study which elucidated the physical mechanisms determining the current transport in reverse-biased Schottky diodes on undoped device grade hydrogenated amorphous silicon (a-Si:H). Method used in making the a-Si:H Schottky diodes; Theoretical framework of the study; Measurement of the...

  • In situ observation of fractal growth during a-Si crystallization in a Cu3Si matrix. Russell, S. W.; Li, Jian; Mayer, J. W. // Journal of Applied Physics;11/1/1991, Vol. 70 Issue 9, p5153 

    Presents a study on the in situ observation of both the silicidation reaction, forming Cu[sub3]Si and the subsequent crystallization of the remaining amorphous silicon (Si) in the silicide matrix. Discussion on the crystallization of amorphous silicon; Method used in determining the average...

  • Picosecond laser induced anomalous crystallization in amorphous silicon. Kanemitsu, Yoshihiko; Nakada, Ichiro; Kuroda, Hiroto // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p939 

    Two different values of thresholds for crystallization of amorphous silicon were observed by using picosecond laser pulses. One of the crystallization thresholds is found experimentally to be clearly below the amorphization threshold. The other crystallization threshold is well above the...

  • Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating. Xu, N. S.; She, J. C.; Huq, S. E.; Chen, J.; Deng, S. Z. // Applied Physics Letters;12/21/1998, Vol. 73 Issue 25 

    A thin (∼2 nm thick) amorphous diamond coating was prepared on single crystal silicon tip arrays by using a filtered vacuum arc plasma deposition technique. The coating has a microscopically uniform morphology. As compared to uncoated tips, the electron emission of the coated tip arrays is...

  • Manipulation of Si nucleation on artificial sites of SiNx (x<4/3) over SiO2. Sato, N.; Yonehara, T. // Applied Physics Letters;8/14/1989, Vol. 55 Issue 7, p636 

    A matrix of Si crystals can be formed on amorphous substrates by manipulating nucleation sites. We have investigated various SiNx by x-ray photon spectroscopy in order to search for suitable artificial nucleation sites and measured the density of Si nuclei deposited on the SiNx. It is found that...

  • Crystal grain nucleation in amorphous silicon. Spinella, Corrado; Lombardo, Salvatore // Journal of Applied Physics;11/15/1998, Vol. 84 Issue 10, p5383 

    Presents a study that reviewed the solid phase crystallization of chemical vapor deposited amorphous silicon films onto oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at high substrate temperatures. Background information on amorphous silicon (a-Si)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics