TITLE

Ultrafast directional nickel-silicide-induced crystallization of amorphous silicon under high-density current stressing

AUTHOR(S)
Yu, C. H.; Lin, H. H.; Cheng, S. L.; Chen, L. J.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1857
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrafast directional crystallization that combined the electric current stressing with metal-induced crystallization has been achieved for BF[sup +, sub 2]-implanted amorphous Si (a-Si) at room temperature. Polycrystalline Si was observed to grow from anode towards cathode and the channels of a-Si strips with a length of 140 µm and a width of 10 µm can be fully crystallized with a stressing time less than 0.2 s. The directional growth of crystalline Si nanowires, 50 nm in width and as long as 3 µm in length, with an extraordinarily high aspect ratio of 60, indicates a strong electric-field-induced effect on the growth. The growth method provides a promising scheme to solve the problems caused by high-temperature and long-term annealing treatment for the applications of optoelectronic devices.
ACCESSION #
9319924

 

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